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Investigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging

dc.contributor.authorThøgersen, Annett
dc.contributor.authorJensen, Ingvild Julie Thue
dc.contributor.authorGraff, Joachim Seland
dc.contributor.authorRingdalen, Inga Gudem
dc.contributor.authorAlmeida Carvalho, Patricia
dc.contributor.authorMehl, Torbjørn
dc.contributor.authorZhu, Junjie
dc.contributor.authorBurud, Ingunn
dc.contributor.authorOlsen, Espen
dc.contributor.authorSøndenå, Rune
dc.date.accessioned2022-05-03T09:40:41Z
dc.date.available2022-05-03T09:40:41Z
dc.date.created2022-04-27T19:16:42Z
dc.date.issued2022
dc.identifier.citationJournal of Applied Physics. 2022, 131(14).en_US
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/11250/2993845
dc.language.isoengen_US
dc.titleInvestigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imagingen_US
dc.title.alternativeInvestigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imagingen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersion
dc.source.volume131en_US
dc.source.journalJournal of Applied Physicsen_US
dc.source.issue14en_US
dc.identifier.doihttps://doi.org/10.1063/5.0087119
dc.identifier.cristin2019649
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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