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Investigation of the areas with high D07-band emission in multicrystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging

dc.contributor.authorThøgersen, Annett
dc.contributor.authorJensen, Ingvild Julie Thue
dc.contributor.authorMehl, Torbjørn
dc.contributor.authorBurud, Ingunn
dc.contributor.authorOlsen, Espen
dc.contributor.authorRingdalen, Inga Gudem
dc.contributor.authorZhu, Junjie
dc.contributor.authorSøndenå, Rune
dc.date.accessioned2024-05-31T08:33:10Z
dc.date.available2024-05-31T08:33:10Z
dc.date.created2024-04-25T13:34:22Z
dc.date.issued2024
dc.identifier.citationJournal of Applied Physics. 2024, 135 (13), .
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/11250/3132072
dc.language.isoeng
dc.titleInvestigation of the areas with high D07-band emission in multicrystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging
dc.title.alternativeInvestigation of the areas with high D07-band emission in multicrystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging
dc.typePeer reviewed
dc.typeJournal article
dc.description.versionpublishedVersion
dc.source.pagenumber7
dc.source.volume135
dc.source.journalJournal of Applied Physics
dc.source.issue13
dc.identifier.doi10.1063/5.0196586
dc.identifier.cristin2264519
dc.relation.projectNorges forskningsråd: 280909
dc.relation.projectNorges forskningsråd: 197405
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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