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Oxygen-related defects in n-type Czochralski silicon wafers studied by hyperspectral photoluminescence imaging

dc.contributor.authorMehl, Torbjørn
dc.contributor.authorBurud, Ingunn
dc.contributor.authorLetty, Elenore
dc.contributor.authorOlsen, Espen
dc.date.accessioned2018-03-07T08:12:17Z
dc.date.available2018-03-07T08:12:17Z
dc.date.created2018-01-11T08:25:39Z
dc.date.issued2017
dc.identifier.citationEnergy Procedia. 2017, 124 107-112.nb_NO
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/11250/2489014
dc.language.isoengnb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleOxygen-related defects in n-type Czochralski silicon wafers studied by hyperspectral photoluminescence imagingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersion
dc.source.pagenumber107-112nb_NO
dc.source.volume124nb_NO
dc.source.journalEnergy Procedianb_NO
dc.identifier.doi10.1016/j.egypro.2017.09.326
dc.identifier.cristin1540399
cristin.unitcode192,15,0,0
cristin.unitnameRealfag og teknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal