Oxygen-related defects in n-type Czochralski silicon wafers studied by hyperspectral photoluminescence imaging
dc.contributor.author | Mehl, Torbjørn | |
dc.contributor.author | Burud, Ingunn | |
dc.contributor.author | Letty, Elenore | |
dc.contributor.author | Olsen, Espen | |
dc.date.accessioned | 2018-03-07T08:12:17Z | |
dc.date.available | 2018-03-07T08:12:17Z | |
dc.date.created | 2018-01-11T08:25:39Z | |
dc.date.issued | 2017 | |
dc.identifier.citation | Energy Procedia. 2017, 124 107-112. | nb_NO |
dc.identifier.issn | 1876-6102 | |
dc.identifier.uri | http://hdl.handle.net/11250/2489014 | |
dc.language.iso | eng | nb_NO |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/deed.no | * |
dc.title | Oxygen-related defects in n-type Czochralski silicon wafers studied by hyperspectral photoluminescence imaging | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | publishedVersion | |
dc.source.pagenumber | 107-112 | nb_NO |
dc.source.volume | 124 | nb_NO |
dc.source.journal | Energy Procedia | nb_NO |
dc.identifier.doi | 10.1016/j.egypro.2017.09.326 | |
dc.identifier.cristin | 1540399 | |
cristin.unitcode | 192,15,0,0 | |
cristin.unitname | Realfag og teknologi | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 |