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dc.contributor.authorMehl, Torbjørn
dc.contributor.authorDi Sabatino Lundberg, Marisa
dc.contributor.authorAdamczyk, Krzysztof
dc.contributor.authorBurud, Ingunn
dc.contributor.authorOlsen, Espen
dc.date.accessioned2017-09-26T09:22:24Z
dc.date.available2017-09-26T09:22:24Z
dc.date.created2017-01-24T14:39:40Z
dc.date.issued2016
dc.identifier.citationEnergy Procedia. 2016, 92 130-137.nb_NO
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/11250/2456715
dc.language.isoengnb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleDefects in multicrystalline Si wafers studied by spectral photoluminescence imaging, combined with EBSD and dislocation mappingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.pagenumber130-137nb_NO
dc.source.volume92nb_NO
dc.source.journalEnergy Procedianb_NO
dc.identifier.doi10.1016/j.egypro.2016.07.043
dc.identifier.cristin1436754
cristin.unitcode192,1,1,0
cristin.unitnameInstitutt for matematiske realfag og teknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal