dc.contributor.author | Thøgersen, Annett | |
dc.contributor.author | Jensen, Ingvild Julie Thue | |
dc.contributor.author | Graff, Joachim Seland | |
dc.contributor.author | Ringdalen, Inga Gudem | |
dc.contributor.author | Almeida Carvalho, Patricia | |
dc.contributor.author | Mehl, Torbjørn | |
dc.contributor.author | Zhu, Junjie | |
dc.contributor.author | Burud, Ingunn | |
dc.contributor.author | Olsen, Espen | |
dc.contributor.author | Søndenå, Rune | |
dc.date.accessioned | 2022-05-03T09:40:41Z | |
dc.date.available | 2022-05-03T09:40:41Z | |
dc.date.created | 2022-04-27T19:16:42Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | Journal of Applied Physics. 2022, 131(14). | en_US |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | https://hdl.handle.net/11250/2993845 | |
dc.language.iso | eng | en_US |
dc.title | Investigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging | en_US |
dc.title.alternative | Investigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | |
dc.source.volume | 131 | en_US |
dc.source.journal | Journal of Applied Physics | en_US |
dc.source.issue | 14 | en_US |
dc.identifier.doi | https://doi.org/10.1063/5.0087119 | |
dc.identifier.cristin | 2019649 | |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |